student from 01.01.2023 to 01.01.2025
AO NII ""Polyus" im. M.F. Stel'maha"
Moscow, Moscow, Russian Federation
RUDN im. Patrisa Lumumby
Russian Federation
Russian Federation
The theoretical value of laser radiation power density, above which excess leads to the destruction of the surface of the sensitive site of the inverse In0,53Ga0,47As p-i-n photodiode, is determined.
InGaAs p-i-n photodiode, laser heating, backlighting
1. Koronnov, A.A. Study of the characteristics of a German avalanche photodiode subjected to powerful laser/ A. A. Coronnov, G. M. Zverev, M. M. Zemlyanov, E. V. Zarikova, D. V. Marsagishvili // Applied physics. - 2015. - 4. - p. 54-58. EDN: https://elibrary.ru/SGYLVA
2. Koronnov, A.A. Improvement of photometric devices on the basis of a Germanic avalanche photodiode under the influence of powerful laser radiation/ A. A. Koronnov, A. E. Safutin, M. M. M. Zemlenov, G. M. Zverev // Applied physics. - 2015. - 6. - p. 65-69. EDN: https://elibrary.ru/VBUZTN
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6. Passler, R. Non-Debye heat capacity formula refined and applied to GaP, GaAs, GaSb, InP, InAs, and InSb / R. Passler // AIP ADVANCES. – 2013. – № 3. – S. 1–34. DOI: https://doi.org/10.1063/1.4818273
7. Horunzhiy, I.A. Teplovye processy v moschnom vysokoskorostnom InGaAs/InP p–i–n-fotodiode s balochnymi vyvodami / I. A. Horunzhiy, D. S. Domanevskiy, S. A. Malyshev, A. L. Chizh // Trudy BGTU. – 2013. – №6. – S. 72–75.
8. Fiziko-tehnicheskiy institut imeni A.F.Ioffe – spravochnaya informaciya [Elektronnyy resurs] : baza dannyh soderzhit svedeniya o fiziko-himicheskih svoystvah InGaAs – Elektron. dan. – SPb. – Rezhim dostupa: https://ioffe.ru/SVA/NSM/Semicond/GaInAs/thermal.html - (Data obrascheniya 15.03.2025).
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10. Chen L., Experimental Investigation of Millisecond-Pulse Laser Heating of Biased Si Avalanche Photodiodes in an External Circuit / L. Chen, Liu H., Jin G. // Russ Laser. – 2020. – №41. – p. 384–389. DOI: https://doi.org/10.1007/s10946-020-09890-w
