POLYUS Research Institute of M.F. Stelmakh Joint Stock Company
Moscow, Moscow, Russian Federation
Peoples’ Friendship University of Russia
Russian Federation
Russian Federation
The theoretical value of laser radiation power density, above which excess leads to the destruction of the surface of the sensitive site of the inverse In0,53Ga0,47As p-i-n photodiode, is determined.
InGaAs p-i-n photodiode, laser heating, backlighting
1. Koronnov, A.A. Study of the characteristics of a German avalanche photodiode subjected to powerful laser/ A. A. Coronnov, G. M. Zverev, M. M. Zemlyanov, E. V. Zarikova, D. V. Marsagishvili // Applied physics. - 2015. - 4. - p. 54-58. EDN: https://elibrary.ru/SGYLVA
2. Koronnov, A.A. Improvement of photometric devices on the basis of a Germanic avalanche photodiode under the influence of powerful laser radiation/ A. A. Koronnov, A. E. Safutin, M. M. M. Zemlenov, G. M. Zverev // Applied physics. - 2015. - 6. - p. 65-69. EDN: https://elibrary.ru/VBUZTN
3. Koronnov, A.A. Pin-fotodiod na osnove InGaAs/InP dlya fotopriemnyh ustroystv sistem impul'snoy lazernoy dal'nometrii / A. A. Koronnov, N. F. Salova, M. M. Zemlyanov, A. V. Grinin, A. E. Safutin, E. V. Kuznecov, M. A. Ladugin, M. Yu. Kuznecov, N. N. Bragin, A. V. Mamin // Kvantovaya elektronika. – 2022. – № 52. – S. 1–5. EDN: https://elibrary.ru/HJBISE
4. Lykov A. V. Teoriya teploprovodnosti. — M.: Vysshaya shkola, 1967.
5. Golovan' L. A., Kashkarov P. K., Lakeenkov V. M. i dr. // Fizika i tehnika poluprovodnikov. 1997. T. 31. № 8. S. 931. DOI: https://doi.org/10.1134/1.1187252; EDN: https://elibrary.ru/RYMNWV
6. Passler, R. Non-Debye heat capacity formula refined and applied to GaP, GaAs, GaSb, InP, InAs, and InSb / R. Passler // AIP ADVANCES. – 2013. – № 3. – S. 1–34. DOI: https://doi.org/10.1063/1.4818273
7. Horunzhiy, I.A. Teplovye processy v moschnom vysokoskorostnom InGaAs/InP p–i–n-fotodiode s balochnymi vyvodami / I. A. Horunzhiy, D. S. Domanevskiy, S. A. Malyshev, A. L. Chizh // Trudy BGTU. – 2013. – №6. – S. 72–75.
8. Fiziko-tehnicheskiy institut imeni A.F.Ioffe – spravochnaya informaciya [Elektronnyy resurs] : baza dannyh soderzhit svedeniya o fiziko-himicheskih svoystvah InGaAs – Elektron. dan. – SPb. – Rezhim dostupa: https://ioffe.ru/SVA/NSM/Semicond/GaInAs/thermal.html - (Data obrascheniya 15.03.2025).
9. Bacher, F.R. Optical-absorption coefficient of In1-xGxAs/Inp / F. R. Bacher, J. S. Blakemore, J. T. Ebner, J. R. Arthur // PHYSICAL REVIEW B. – 1988. – №5. – p. 2551–2557. DOI: https://doi.org/10.1103/PhysRevB.37.2551
10. Chen L., Experimental Investigation of Millisecond-Pulse Laser Heating of Biased Si Avalanche Photodiodes in an External Circuit / L. Chen, Liu H., Jin G. // Russ Laser. – 2020. – №41. – p. 384–389. DOI: https://doi.org/10.1007/s10946-020-09890-w



